Samsung had to stop production of DRAM and V-NAND memory at its fab near Hwaseong, South Korea, due to power outage earlier this week. Damage caused by disruption of production is something that is yet to be determined, but the company told local news agencies that it would take days to restore operations of the fab.
The power outage lasted for about a minute and was caused by an explosion of a power transmission cable at a local substation. According to media reports citing sources with knowledge of the matter, it will take Samsung two or three days to restore operations of the production facility, but the sources declined to reveal whether or not manufacturing equipment was broken.
It is unclear how many wafers containing DRAM and V-NAND memory were processed at the time of the outage and how many of them were damaged, but we do know that the fab complex produces both types of memory at the same time.
Power outages tend to happen on various semiconductor plants. Back in March 2018 a blackout took place at Samsung’s memory fab near Pyeongtaek, South Korea, whereas in June 2018 an outage happened at Yokkaichi Operations complex operated by Toshiba/Kioxia and Western Digital. In both cases the outages damaged production and caused massive financial losses.
Samsung is currently gearing up to release its new high-end smartphones in the first half of the 2020. Typically, the company (just like its rivals) is stockpiling DRAM and V-NAND memory ahead of major launches, so the consequences of the outage remain to be seen.
Sources: Reuters, Yonhap